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| inchange semiconductor product specification silicon pnp power transistors 2SB631 2SB631k description ? ? with to-126 package ? complement to type 2sd600/k ? high breakdown voltage v ceo: -100/-120v ? high current: -1a ? low saturation voltage,excellent h fe linearity applications ? for low-frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2SB631 -100 v cbo collector-base voltage 2SB631k open emitter -120 v 2SB631 -100 v ceo collector-emitter voltage 2SB631k open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -1 a i cm collector current-peak -2 a t a =25 ?? 1 p d total power dissipation t c =25 ?? 8 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB631 2SB631k characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SB631 -100 v (br)ceo collector-emitter breakdown voltage 2SB631k i c =-1ma; r be = ?t -120 v 2SB631 -100 v (br)cbo collector-base breakdown voltage 2SB631k i c =-10 | a ;i e =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-10 | a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.5a ;i b =-50ma -0.4 v v besat base-emitter saturation voltage i c =-0.5a ;i b =-50ma -1.2 v i cbo collector cut-off current v cb =-50v; i e =0 -1 | a i ebo emitter cut-off current v eb =-4v; i c =0 -1 | a h fe-1 dc current gain i c =-50ma ; v ce =-5v 60 320 h fe-2 dc current gain i c =-0.5a ; v ce =-5v 20 f t transition frequency i c =-50ma ; v ce =-10v 110 mhz c ob collector output capacitance f=1mhz ; v cb =-10v 30 pf switching times t f fall time 0.08 | s t off turn-off time 0.10 | s t stg storage time i c =-500ma ; v ce =-12v i b1 =-i b2 =-50ma 0.60 | s ? h fe-1 classifications d e f 60-120 100-200 160-320 inchange semiconductor product specification 3 silicon pnp power transistors 2SB631 2SB631k package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon pnp power transistors 2SB631 2SB631k |
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